PART |
Description |
Maker |
MA2C856 |
Band Switching Diodes SILICON, VHF BAND, MIXER DIODE, DO-34
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Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
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BAR65-07 BAR6507 |
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-Diode Band switch for TV-tuners) From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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BAR65-02 BAR65-02W Q62702-A1216 |
Silicon RF Switching Diode Preliminary data (Low loss/ low capacitance PIN-diode Band switch for TV-tuners) Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners)
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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ZC930 ZC930TA ZC931TA ZC932TA ZC933A ZC933ATA ZC93 |
12 Volt hyperabrupt varactor diode SILICON 12V HYPERABRUPT VARACTOR DIODES VHF BAND, 7.15 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SILICON 12V HYPERABRUPT VARACTOR DIODES VHF BAND, 4.9 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE CAP 0.022UF 600V/630V 10% X7R SMD-1812 TR-7 FLEXITERM VHF BAND, 9.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC ZETEX PLC
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RKS1500DKK |
Diodes>Switching Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch From old datasheet system
|
RENESAS[Renesas Electronics Corporation]
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BA982 LL4148 LS4154 BAV21 LS4150 |
SILICON, VHF BAND, MIXER DIODE 0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA 0.15 A, 35 V, SILICON, SIGNAL DIODE 0.25 A, 250 V, SILICON, SIGNAL DIODE, DO-35 0.3 A, 50 V, SILICON, SIGNAL DIODE
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TEMIC SEMICONDUCTORS
|
SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Siemens Semiconductor Group
|
MMVL109T1 MMVL109T1G |
Tuning Diode SOD323 30V VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE Silicon Epicap Diodes
|
ONSEMI[ON Semiconductor]
|
GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation MICROSEMI CORP-LOWELL
|
DME3019-325-008 DME3013-131-012 DMJ3107-364-008 DM |
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, K BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
BA423AL |
AM band-switching diode
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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